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1. product profile 1.1 general description 130 w ldmos transistor intended for pulsed applications in the 0.5 ghz to 1.4 ghz range. 1.2 features and benefits ? easy power control ? integrated esd protection ? high flexibility with resp ect to pulse formats ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (0.5 ghz to 1.4 ghz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? amplifiers for pulsed applications in the 0.5 ghz to 1.4 ghz frequency range BLL6H0514L-130; bll6h0514ls-130 ldmos driver transistor rev. 2 ? 13 september 2010 product data sheet table 1. application information typical rf performance at t case =25 ? c; i dq = 50 ma; in a class-ab application circuit. mode of operation f t p ? v ds p l g p rl in ? d p droop(pulse) t r t f (mhz) (? s) (%) (v) (w) (db) (db) (%) (db) (ns) (ns) pulsed rf 960 to 1215 128 10 50 130 19 10 54 0 15 8 1200 to 1400 300 10 50 130 17 10 50 0 15 8
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 2 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol BLL6H0514L-130 (sot1135a) 1drain 2gate 3source [1] bll6h0514ls-130 (sot1135b) 1drain 2gate 3source [1] 1 2 3 sym112 1 3 2 2 3 1 sym112 1 3 2 table 3. ordering information type number package name description version BLL6H0514L-130 - flanged ceramic package; 2 mounting holes; 2 leads sot1135a bll6h0514ls-130 - earless flanged ceramic package; 2 leads sot1135b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 100 v v gs gate-source voltage ? 0.5 +13 v i d drain current - 18 a t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 3 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor 5. thermal characteristics 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit z th(j-c) transient thermal impedance from junction to case t case =85 ?c; p l = 130 w t p = 100 ? s; ? = 10 % 0.17 k/w t p = 200 ? s; ? = 10 % 0.22 k/w t p = 300 ? s; ? = 10 % 0.25 k/w t p = 100 ? s; ? = 20 % 0.23 k/w t p = 1 ms; ? = 10 % 0.36 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 630 ma 100 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 135 ma 1.3 1.8 2.25 v i dss drain leakage current v gs =0v; v ds =50v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 15.8 18 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 135 ma 806 - 1578 ms r ds(on) drain-source on-state resistance v gs =v gs(th) + 6.25 v; i d = 135 ma -200275m ? table 7. rf characteristics mode of operation: pulsed rf; t p = 300 ? s; ? = 10 %; rf performance at v ds =50v; i dq =50ma; f = 1.2 ghz to 1.4 ghz; t case =25 ? c; unless otherwise specified, in a class-ab production test circuit. symbol parameter conditions min typ max unit p l output power 130 - - w v ds drain-source voltage p l =130w--50v g p power gain p l =130w 1517- db rl in input return loss p l =130w 7 10 - db ? d drain efficiency p l =130w 4550- % p droop(pulse) pulse droop power p l =130w - 0 0.3 db t r rise time p l = 130 w - 20 50 ns t f fall time p l =130w - 6 50 ns
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 4 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor 6.1 ruggedness in class-ab operation the BLL6H0514L-130 and bll6h0514ls-130 are capable of withstanding a load mismatch corresponding to vswr = 5 : 1 through all phases under the following conditions: v ds =50v; i dq =50ma; p l = 130 w; f = 1.2 ghz to 1.4 ghz; t p = 300 ? s; ? =10%. 7. application information 7.1 impedance information table 8. typical impedance f z s z l mhz ? ? 1200 1.21 ? j3.44 2.40 ? j0.63 1300 1.56 ? j4.49 2.30 ? j0.87 1400 2.21 ? j4.86 2.00 ? j1.71 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 5 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor 7.2 performance curves v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. fig 2. power gain and drain efficiency as function of frequency; typical values fig 3. input return loss as a function of frequency; typical values 001aam262 f (ghz) 1.15 1.45 1.35 1.25 8 12 4 16 20 g p (db) d (%) 0 30 40 20 50 60 10 g p d 001aam263 f (ghz) 1.15 1.45 1.35 1.25 8 12 4 16 20 rl in (db) 0 v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. (1) f = 1.2 ghz (2) f = 1.3 ghz (3) f = 1.4 ghz v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. (1) f = 1.2 ghz (2) f = 1.3 ghz (3) f = 1.4 ghz fig 4. power gain as a function of load power; typical values fig 5. drain efficiency as function of load power; typical values p l (w) 0 160 120 40 80 001aam264 8 12 4 16 20 g p (db) 0 (1) (2) (3) p l (w) 0 160 120 40 80 001aam265 30 40 20 50 60 d (%) 10 (1) (2) (3)
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 6 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor 8. test information v ds =50v; i dq =50ma; t p = 300 ? s; ? = 10 %. (1) f = 1.2 ghz (2) f = 1.3 ghz (3) f = 1.4 ghz fig 6. load power as a function of input power; typical values p i (w) 04 3 12 001aam266 80 40 120 160 p l (w) 0 (1) (2) (3) printed-circuit board (pcb) material: duroid 6006 with ? r = 6.15 and thickness = 0.64 mm. see table 9 for list of components. fig 7. component layout 001aam267 c12 c7 r1 c5 c3 c2 c1 c6 c4 c11 c10 c13 r2 c9 c8
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 7 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor [1] american technical ce ramics type 700a or capacitor of same quality. [2] american technical ce ramics type 100a or capacitor of same quality. [3] american technical ce ramics type 100b or capacitor of same quality. table 9. list of components see figure 7 for component layout. component description value remarks c1 multilayer ceramic chip capacitor 10 ? f; 50 v c2, c11 multilayer ceramic chip capacitor 1 nf [1] c3, c4, c6, c9, c10 multilayer ceramic chip capacitor 100 pf [2] c5, c7, c8 multilayer ceramic chip capacitor 43 pf [2] c12 electrolytic capacitor 220 ? f; 63 v c13 multilayer ceramic chip capacitor 1 nf [3] fitted vertically in series with r2 r1 smd resistor 10 ? smd 0603 r2 wirewound lead resistor 2.61 ? ; 0.25 w fitted in series with c13
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 8 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor 9. package outline fig 8. package outline sot1135a references outline version european projection issue date iec jedec jeita sot1135a sot1135a_po 09-10-12 09-12-14 unit (1) mm max nom min 4.65 3.76 5.26 5.00 9.65 9.40 9.65 9.40 9.65 9.40 9.65 9.40 19.94 18.92 3.30 2.92 15.24 0.51 a dimensions note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. flanged ceramic package; 2 mounting holes; 2 leads sot1135a bc 0.18 0.10 dd 1 ee 1 f 1.14 0.89 hpq 1.70 1.45 qu 1 20.45 20.19 u 2 9.91 9.65 w 1 0.25 w 2 inches max nom min 0.183 0.148 0.207 0.197 0.38 0.37 0.38 0.37 0.38 0.37 0.38 0.37 0.785 0.745 0.130 0.115 0.6 0.02 0.007 0.004 0.045 0.035 0.067 0.057 0.805 0.795 0.39 0.38 0.01 a d f d 1 c e e 1 q b c a q u 1 u 2 b 2 1 3 h p a b w 1 c w 2 0 5 10 mm scale
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 9 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor fig 9. package outline sot1135b references outline version european projection issue date iec jedec jeita sot1135b sot1135b_po 09-10-12 09-12-14 unit (1) mm max nom min 4.65 3.76 5.26 5.00 9.65 9.40 9.65 9.40 9.65 9.40 9.65 9.40 19.94 18.92 a dimensions note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. earless flanged ceramic package; 2 leads sot1135b bc 0.18 0.10 dd 1 ee 1 f 1.14 0.89 hq 1.70 1.45 u 1 9.91 9.65 u 2 9.91 9.65 w 2 0.51 inches max nom min 0.183 0.148 0.207 0.197 0.38 0.37 0.38 0.37 0.38 0.37 0.38 0.37 0.785 0.745 0.007 0.004 0.045 0.035 0.067 0.057 0.39 0.38 0.39 0.38 0.02 c e e 1 q u 1 u 2 b 2 1 h d w 2 0 5 10 mm scale a d f d 1 3 d
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 10 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor 10. handling information 11. abbreviations 12. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description ldmos laterally diffused metal-oxide semiconductor rf radio frequency smd surface mounted device vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes BLL6H0514L-130_0514ls-130 v.2 20100913 product data sheet - BLL6H0514L-130_ 0514ls-130 v.1 modifications: ? section 1.1 on page 1 : caution about esd has been moved to section 10 on page 10 . ? the status of this data sheet has been changed to product data sheet. BLL6H0514L-130_0514ls-130 v.1 20100809 preliminary data sheet - -
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 11 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLL6H0514L-130_0514ls-130 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 2 ? 13 september 2010 12 of 13 nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors bll6h0514l(s)-130 ldmos driver transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 13 september 2010 document identifier: BLL6H0514L-130_0514ls-130 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation . . . . . . . . . 4 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 impedance information . . . . . . . . . . . . . . . . . . . 4 7.2 performance curves . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 handling information. . . . . . . . . . . . . . . . . . . . 10 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 contact information. . . . . . . . . . . . . . . . . . . . . 12 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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